On Defects, they have shown around the micron scale that they add no new defects towards the layer transferred to the SmartSiC, nonetheless foreseeable future work to increase that to the full wafer would offer certainty from the macro trend. The opportunity for unbiased validation of those substrates would allay https://x.com/Anumhsite/status/1809241427484053971
New Step By Step Map For specific heat of silicon carbide
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